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IXTN62N50L
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
SOT-227B (IXTN) Outline
g fs
V DS = 10V, I D = 0.5 ? I D25 , Note 1
10
15
20
S
C iss
11.5
nF
C oss
C rss
V GS = 0V, V DS = 25V, f = 1MHz
1460
210
pF
pF
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
Resistive Switching Times
V GS = 15V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2 Ω (External)
V GS = 20V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
36
85
110
75
550
115
180
ns
ns
ns
ns
nC
nC
nC
(M4 screws (4x) supplied)
R thJC
0.156 ° C/W
R thCS
Safe Operating Area Specification
0.05
° C/W
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
SOA
V DS = 400V, I D = 750mA, T C = 90 ° C
300
W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
I F = I S , V GS = 0V
500
62
176
1.5
A
A
V
ns
-di/dt = 100A/ μ s, V R = 100V
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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